Osram semiconductor laser bar to break the brightness record

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OSRAM Opto Semiconductors has developed a wide area laser diode that is reported to create a laboratory brightness record of up to 4.8 W / (mm * mrad). The company said that the higher the brightness of the laser, the more efficient the light can be injected into the fiber, thereby enhancing the material processing fiber laser pump module output power. This is one of the outcomes of the "High Brightness Diode Laser Integrated Micro-Optics and Micro-Thermal Elements" project starting in 2012 (IMOTHEB). The project, funded by the German Federal Ministry of Education and Research, has now been successfully completed.

Figure 2 Osram power laser prototype. An important application of fiber-coupled lasers is high-power lasers for pumping materials processing applications.

For large area laser diodes, lateral brightness up to 4.8 W / mm * mrad is one of the highest known values ​​for wide area laser diodes. Osram OS said that the chip design optimization, in particular, by integrating micro-optics and micro-thermal elements on the chip beam shaping, laid the foundation for this success. These improvements are made through OSRAM coordinated IMOTHEB research projects. One of the goals of this project is to further develop laser chips that enable them to achieve higher light output power with a constant beam quality. As one of the project partners, the Max Born Institute has provided tremendous support for chip development by providing a broad range of methods and analysis. These research results will continue to integrate product development. Pump module output power increase of 10%

An important application of fiber-coupled lasers is the pumping of high-power lasers for material processing, especially fiber lasers, such as sheet metal cutting and welding of sheet metal in the automotive industry, at the same time cost pressures are also increasing day by day. Therefore, the IMOTHEB project aims to reduce the system cost of such pump modules. Project partner DILAS Semiconductor Laser Co., Ltd. developed the concept of diode laser assembly automation.

Another key element is the brightness of the laser source. DILAS uses a demonstration module to verify that the OSRAM modified chip can increase the output power of the module by 10%. Dr. Alexander Bachmann, OSRAM Opto Semiconductors Project Coordinator, explains: "More light is injected into the fiber due to the higher chip brightness, and the same module produces more output power than the laser diodes currently used in this application."

The IMOTHEB research project aims to increase the efficiency of laser systems and reduce their production costs. This project (KZ 13N12312) was launched in October 2012 as part of the "Integrated Microphotonics Technology" initiative and is supported by the German Federal Ministry of Education and Research (BMBF). OSRAM Opto Semiconductors is responsible for project coordination. Other project partners are DILAS Semiconductor Laser GmbH of Germany and Max Born Institute of Germany.

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